Paper Publications
Enhanced bandwidth of a lateral-pin Ge/Si avalanche photodiode using inductive gain peaking
Release Time:2024-02-01| Hits:
Institution:信息科学与工程学院
Title of Paper:Enhanced bandwidth of a lateral-pin Ge/Si avalanche photodiode using inductive gain peaking
Journal:Optics and Laser Technology
First Author:王一铭
Document Code:A35EFF714A4C48AEA9B5D2B5961F949C
Issue:1
Page Number:110445
Number of Words:4
Translation or Not:No
Date of Publication:2024-04
Release Time:2024-02-01
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