zhaomingwen

Doctor

With Certificate of Graduation for Doctorate Study

山东大学

Personal Information:

Gender:Male
Date of Birth:1970-01-02
Date of Employment:2001-07-01
Business Address:山东大学中心校区环境楼311室

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Neutral vacancy-defect-induced magnetism in SiC monolayer

Date of Publication:2010-07-25 Hits:

Affiliation of Author(s):物理学院
Journal:Physica E
First Author:zhaomingwen
Indexed by:Unit Twenty Basic Research
Document Code:lw-133541
Volume:42
Issue:9
Page Number:2451
Translation or Not:no
Date of Publication:2010-07-25

Pre One:Vacancy-defect-derived magnetism in titanium oxide nanosheet: A first-principles study

Next One:First-principles prediction of the negatively-charged nitrogen-silicon-vacancy center in cubic silicon carbide

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