Paper Publications

Home >> Scientific Resear... >> Paper Publication...

Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors

Release time:2019-04-14|Hits:

Affiliation of Author(s):微电子学院

Journal:IEEE Transactions on Electron Devices

All the Authors:Xijian Zhang,Li Yuxiang,chenxiufang,xuxiangang,zhaoxian,Song A M

First Author:杨乐陶

Indexed by:Unit Twenty Basic Research

Document Code:C378AC35A5AB4595ADA7AFF720512A91

Volume: 64

Issue:4

Page Number:1846

Translation or Not:no

Date of Publication:2017-04-01

Pre One:
Crystal growth and characterization of thulium calcium oxyborate high temperature piezoelectric crystals
Next One:
Thenmal expansion and electro-elastic features of Ba2TiSi2O8 high temperature piezoelectric crystals

中文    |   MOBILE Version   |   Login SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --