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A New Direct Growth of High Quality Graphene on Si-face of 6H-SiC by Inner and External Carbon Sources Catalyzed by Nickel
Release Time:2019-10-11
  • Institution:
    晶体材料研究所
  • First Author:
    于法鹏
  • All the Authors:
    程秀凤,徐现刚,王正平,赵显,陈秀芳
  • Document Code:
    A81351E1E5DF47C988FEBF9BDA94AABA
  • Translation or Not:
    No
  • Date of Publication:
    2017-11
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