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Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    IEEE Transactions on Electron Devices
  • First Author:
    杨乐陶
  • All the Authors:
    Xijian Zhang,Li Yuxiang,陈秀芳,徐现刚,赵显,Song A M
  • Document Code:
    C378AC35A5AB4595ADA7AFF720512A91
  • Volume:
    64
  • Issue:
    4
  • Page Number:
    1846
  • Translation or Not:
    No
  • Date of Publication:
    2017-04
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