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High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching
Release Time:2019-10-24
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Journal:
    Materials letters
  • First Author:
    张福生
  • All the Authors:
    赵显,陈秀芳,徐现刚,胡小波
  • Document Code:
    15CE5131C3D44DDA8B1ADB1112E420A4
  • Volume:
    195
  • Page Number:
    82
  • Translation or Not:
    No
  • Date of Publication:
    2017-05
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