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A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources
Release Time:2020-03-06
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Journal:
    Applied Surface Science
  • First Author:
    杨志远
  • All the Authors:
    于法鹏,王正平,陈秀芳,程秀凤,赵显,杨志远
  • Document Code:
    52E6FC05C98647D482816D6BCC2F25D3
  • Volume:
    436
  • Page Number:
    511
  • Translation or Not:
    No
  • Date of Publication:
    2018-04
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