Paper Publications

Home >> Scientific Resear... >> Paper Publication...

Zn2GeO4-x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering

Release time:2021-06-02|Hits:

Affiliation of Author(s):化学与化工学院

Journal:Phys. Chem. Chem. Phys。

First Author:王永丽

Indexed by:Unit Twenty Basic Research

Document Code:BC1038249B1042AEB481AE0A62BE5A7E

Volume:22

Issue:18

Page Number:10265

Translation or Not:no

Date of Publication:2020-05-14

Pre One:
Origin of the abnormal reduction of the dielectric response for ReCOB crystals and its mechanism: theoretical and experimental exploration
Next One:
Structural stress and extra optical absorption induced by the intrinsic cation defects in KDP and ADP crystals: a theoretical study

中文    |   MOBILE Version   |   Login SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --