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Zn2GeO4-x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering
Release Time:2021-06-02
  • Institution:
    化学与化工学院
  • Journal:
    Phys. Chem. Chem. Phys。
  • First Author:
    王永丽
  • Document Code:
    BC1038249B1042AEB481AE0A62BE5A7E
  • Volume:
    22
  • Issue:
    18
  • Page Number:
    10265
  • Number of Words:
    5000
  • Translation or Not:
    No
  • Date of Publication:
    2020-05
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