Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI3 Memristors

Release time:2022-11-15|Hits:

Affiliation of Author(s):光学高等研究中心

Journal:Advanced Materials Interfaces

First Author:刘泽翰

Document Code:36A0010986584C62BA06F9A556D8BE9D

Issue:2205

Number of Words:4

Translation or Not:no

Date of Publication:2022-10-06