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Zn2GeO4x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering
Release Time:2022-11-22
  • Institution:
    化学与化工学院
  • Journal:
    Physical Chemistry Chemical Physics
  • First Author:
    樊唯镏
  • Document Code:
    459A9C1DF8BC4309B1D6F328614C9CAA
  • Number of Words:
    5000
  • Translation or Not:
    No
  • Date of Publication:
    2020-05
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