一种在6H/4H-SiC硅面上利用复合金属辅助生长石墨烯的方法

Release time:2019-01-26|Hits:

Affilication of Author(s):晶体材料研究所

Disigner of the Invention:Yu Fapeng,李清波,chengxiufeng,chenxiufang

Application Number:2017108425501

Number of Inventors:5

Service Invention or Not:no

Application Date:2017-09-18