Patents
一种在6H/4H-SiC硅面上利用复合金属辅助生长石墨烯的方法
Release Time:2019-01-26
  • Institution:
    晶体材料研究所
  • Application Number:
    2017108425501
  • Number of Inventors:
    5
  • Service Invention or Not:
    No
  • Application Date:
    2017-09-18
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