基于Cu2O介质层生长单层单晶石墨烯的方法

Release time:2022-09-06|Hits:

Affilication of Author(s):晶体材料研究院

Type of Patent:发明

Application Number:202110808614.2

Number of Inventors:4

Service Invention or Not:no

Application Date:2021-07-16

Publication Date:2022-09-02

Authorization Date:2022-09-02