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Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

Release time:2019-04-14|Hits:

Affiliation of Author(s):微电子学院

Journal:IEEE Electron Device Letters

All the Authors:xinqian,Yiming Wang,Zhou Li,wangqingpu,Song A M

First Author:袁玉卓

Indexed by:Unit Twenty Basic Research

Document Code:2B3ED16CD0274771B2CABDD8DA6D6AC4

Volume:39

Issue:11

Page Number:1676

Translation or Not:no

Date of Publication:2018-11-01

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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
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Ambipolar SnOx thin-film transistors achieved at high sputtering power

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