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All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    杨进
  • All the Authors:
    王一鸣,王卿璞,周莉,辛倩,Song A M
  • Document Code:
    2532544AF4F5476799F6AF1C6F32887A
  • Volume:
    39
  • Issue:
    12
  • Page Number:
    1876
  • Number of Words:
    4000
  • Translation or Not:
    No
  • Date of Publication:
    2018-11
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