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Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity
Release Time:2020-03-06
  • Institution:
    微电子学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    杨进
  • All the Authors:
    辛倩,王一鸣,周莉,王卿璞,Song A M
  • Document Code:
    2018zxsei1294
  • Volume:
    32
  • Issue:
    4
  • Page Number:
    516
  • Translation or Not:
    No
  • Date of Publication:
    2018-12
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