左致远
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具有GaN插入层的大功率碳化硅光导开关制备及其性能研究
  • Project Name:
    具有GaN插入层的大功率碳化硅光导开关制备及其性能研究
  • Institution:
    集成电路学院
  • Leading Scientist:
    徐化勇
  • Supported by:
    省科技厅
  • Nature of Project:
    纵向
  • Project Level:
    省、部委级
  • Project Participants:
    徐化勇,左致远,彭燕,张恒
  • Project Number:
    kyxm-63543
  • Project Approval Number:
    ZR2016FB23
  • Date of Project Approval:
    2016-11-18
  • Scheduled Completion Time:
    2018-11-30
  • Date of Project Completion:
    2018-11-30
  • Date of Project Initiation:
    2016-11-01
  • Release Time:
    2019-04-18
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