左致远
Professor
Visit:
Paper Publications
Zuo Zhiyuan Multilevel halide perovskite memristors based on optical & electrical resistive switching effects
  • Affiliation of Author(s):
    光学高等研究中心
  • Journal:
    Materials Chemistry and Physics
  • First Author:
    刘泽翰
  • Document Code:
    AA502D6D1D9B4657909E55DC8F91FBB2
  • Issue:
    288-1
  • Number of Words:
    3
  • Translation or Not:
    no
  • Date of Publication:
    2022-09-01

Pre One:High-Performance and Environmentally Robust Multilevel Lead-Free Organotin Halide Perovskite Memristors

Next One:High Temperature CsPbBrxI3–x Memristors Based on Hybrid Electrical and Optical Resistive Switching Effects

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University