刘超, 山东大学集成电路学院/晶体材料国家重点实验室教授、博士生导师、国家重点研发计划首席青年科学家、齐鲁青年学者、山东省高层次人才。2016年博士毕业于香港科技大学，获电子与计算机工程学博士学位，2016年至2019年在瑞士洛桑联邦理工学院从事博士后研究，2024年在英国伦敦大学学院从事访问学者工作。主要研究兴趣是宽禁带半导体材料与器件，包括III族氮化物半导体的MOCVD外延生长、先进器件制备工艺以及单片集成模块的开发等。从事宽禁带半导体GaN材料与器件研究十余年，有数项工作为世界首创及国际领先，包括首枚硅基GaN垂直结构MOSFET器件以及全GaN基单片集成Micro-LED显示模块, 首次实现了垂直型GaN功率MOSFET与续流/反向阻断肖特基二极管的单片集成，至今保持着硅基GaN垂直结构功率MOSFET的性能记录。迄今为止，在本领域权威期刊IEEE Electron Device Letters、IEEE Transactions on Electron Devices、Applied Physics Letters、Optics Letters，以及功率半导体顶级会议ISPSD等共发表论文100余篇，申请/授权发明专利30余件，其研究成果被IEEE Spectrum、Semiconductor Today、Compound Semiconductor等国际产业杂志亮点报道10余次。主持国家重点研发计划、国家自然科学基金等十余项科研项目以及公司横向课题，担任国家级人才项目（LJ/CJ）、科技部、国家自然科学基金、波兰国家科学中心基金会、山东省自然科学基金、山东省工信厅、广东省自然科学基金、教育部高校博士论文、深圳市科创委评审人，以及十余个半导体材料与器件领域权威期刊审稿人、客座编辑与编委。主讲《电路基础》本科生课程以及《Compound Semiconductor Materials and Devices》全英文国际化研究生课程。

2019 年－：

教授、博士生导师、齐鲁青年学者，山东大学集成电路学院、晶体材料国家重点实验室、教育部新一代半导体材料集成攻关大平台

2016 年－2019 年：

博士后, 瑞士洛桑联邦理工学院电子工程系，导师: Prof. Elison Matioli

2012 年－2016 年：

博士，香港科技大学电子与计算机工程系，导师: 美国工程院/香港工程科学院院士、IEEE/Optica Fellow 刘纪美教授

2009 年－2012 年：

硕士，华南师范大学半导体科学技术研究院，导师: 李述体研究员

2005 年－2009 年：

本科，华南师范大学物理与电信工程学院

     课题组每年依托山东大学集成电路学院/教育部新一代半导体材料集成攻关研究院/晶体材料国家重点实验室/ZY工程师计划招收1-2名博士研究生, 4-5名硕士研究生, 欢迎有有志于第三代宽禁带半导体器件、功率模块与系统方面研究的同学报考，微电子、电路、物理等相关专业的同学优先。课题组配有完备的器件仿真设计、材料生长、器件加工、以及半导体芯片性能测试设备, 常年招聘青年教师/博士后, 欢迎有半导体芯片制备及测试或器件建模经验的优秀博士生加入。有意者请将个人简历及代表作发至chao.liu@sdu.edu.cn。

       课题组与香港科技大学、瑞士洛桑联邦理工学院、新加坡南洋理工大学、英国伦敦大学学院、英国卡迪夫大学、澳门大学、北京大学、中科院苏州纳米所、中电科十三所、中电科四十六所、南京大学、中山大学、南方科技大学、华南理工大学、华为、海信、歌尔、圆融光电、晶湛半导体、思坦科技、镭昱光电、镓谷半导体、晶通半导体、远山新材料、BelGaN、IMEC、Osram、II-VI等国内外顶尖高校/科研院所/公司保持着密切联系与合作, 可推荐优秀学生联合培养或进一步深造。

博士招生专业：

集成电路科学与工程（学术型）

集成电路工程（专业型）

硕士招生专业：

集成电路科学与工程（学术型）

集成电路工程（专业型）

22. 广东省粤深联合重点项目，课题负责人

21. 国家重点研发计划青年科学家项目， 主持

20. 国家自然科学基金青年项目，主持

19. 华为技术有限公司技术开发项目，主持

18. 西安电子科技大学技术开发项目，主持

17. 广东省自然科学基金面上项目，主持

16. 山东省自然科学基金青年项目，主持

15. 广东省基础与应用基础研究基金青年项目，主持

14. 教育部新一代半导体材料集成攻关大平台紧密攻关项目，主持

13. 深圳市基础研究专项（自然科学基金）面上项目，主持

12. 深圳市协同创新科技计划国际科技合作项目，主持

11. 晶体材料国家重点实验室高层次青年人才项目，主持

10. 晶体材料国家重点实验室自由探索项目，主持

9. 海信视像科技股份有限公司技术开发项目，主持

8. 海信视像科技股份有限公司技术开发项目，主持

7. 海信视像科技股份有限公司技术开发项目，主持

6. 山东大学研究生国际化课程项目，主持

5. 山东大学齐鲁青年学者项目， 主持

4. 欧盟地平线2020计划, 欧洲研究委员会(ERC), III-Nitride Nanostructures for Energy Efficient Devices，主要参与人

    负责硅衬底上垂直结构功率MOSFET, SBD, p-i-n diode等的制备与集成以及新型GaN功率器件的外延生长与器件制备

3. 香港研究资助局 (RGC) Theme-based Research Scheme, Cost-effective and eco-friendly LED system-on-chip (SOC), 主要参与人

    负责智能照明芯片中GaN HEMT/LED/PD的MOCVD生长，器件制备及单芯片集成

2. 香港研究资助局(RGC), A Novel Monolithically Integrated GaN HEMT-Si MOSFET High-Voltage Cascode Structure，主要参与人

    负责单片集成的Si-GaN芯片模组中GaN HEMT部分的MOCVD选区外延生长及器件制备

1. 广东省科技攻关计划, Research on High power & high brightness LED epi wafers, 主要参与人

    负责高亮度蓝光LED的结构设计、MOCVD生长、制备与测试

100. Hang Chen, Shuhui Zhang, Tianpeng Yang, Tingting Mi, Xiaowen Wang and Chao Liu*. Vertical Ultra-Wide Bandgap Al_0.5Ga_0.5N P-N Memory Diodes. IEEE Electron Device Letters, 2025

99. Ying Qi , Hang Zhou , Mengran Liu, and Chao Liu*. Alleviated Asymmetry in Carrier Transport with V-Shaped Multiple Quantum Wells in AlGaN-Based DUV LEDs. IEEE Transactions on Electron Devices, 2025

98. Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin*, and Sen Huang*, Optimization of Scaling-Down Performance In Sub-100 nm AlGaN/GaN HFETS Based on Electron Velocity Modulation. IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2025

97. 高楠, 房玉龙*, 王波, 张志荣, 尹甲运, 韩颖, 刘超. 基于衬底台阶调控技术的高质量GaN生长研究. 半导体技术, 2025

96. 董增印, 王英民*, 张 嵩, 李 贺, 孙科伟, 程红娟*, 刘超*. HVPE 法同质外延氧化镓厚膜技术研究. 人工晶体学报, 2025

95. Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang  and Chao Liu*. 650 V Vertical Al_0.51Ga_0.49N Power Schottky Diodes. Applied Physics Letters, 2024

94. Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang  and Chao Liu*. 1 kV Vertical P-i-N Diodes Based on Ultra-wide Bandgap Al_0.47Ga_0.53N Grown by MOCVD.  IEEE Electron Device Letters, 2024

93. Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang  and Chao Liu*. MOCVD Growth and Fabrication of Vertical P-i-N and Schottky Power Diodes Based on Ultra-wide Bandgap AlGaN Epitaxial Structures.  International Symposium on Power Semiconductor Devices and ICs（ISPSD), Bremen, Germany, June 2-6, 2024

92. Juan Cai , Heng Wang , Jian Yin , Xuyang Liu  and Chao Liu*. Design Strategy and Numerical Investigation of Vertical β-Ga2O3 Schottky Barrier Diodes with Compound Termination Extension. IEEE Transactions on Electron Devices, 2024

91. Yuchuan Ma , Heng Wang , Sihao Chen  and Chao Liu*. GaN Vertical MOSFETs with Monolithically Integrated Freewheeling Merged PN-Schottky Diodes (MPS-MOS) for 1.2 kV Applications.  IEEE Transactions on Electron Devices, 2024

90. Ying Qi , Wentao Tian , Yipin Gao , Shuti Li*, Chao Liu*. AlGaN-Based DUV LEDs with Al-Composition-Engineered AlGaN Superlattice Inserted at the p-EBL/Hole Supplier Interface.  IEEE Transactions on Electron Devices, 2024

89. Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin*, Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs. Applied Physics Letters, 2024

88. Mingyan Wang, Heng Zhou, Chao Liu, Zhaojun Lin*, Yuping Zeng*, Peng Cui*. Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs. Applied Physics Letters, 2024

87. Chunwei Zhang, Weihao Lu,  Song Gao, Chao Liu and Yang Li*, A 500 V Super Field Plate LIGBT with Excellent Voltage Blocking Capability. IEEE Electron Device Letters, 2024

86. Ying Qi , Wentao Tian , Mengran Liu , Shuti Li*  and Chao Liu*. Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Engineered p-AlGaN Hole Supplier Layer.  IEEE Transactions on Electron Devices, 2024

85. Hongjie Shao , Yongchen Ji , Xuyang Liu , Heng Wang  and Chao Liu*. Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings.  Japanese Journal of Applied Physics, 2024

84. Heng Wang , Sihao Chen , Hang Chen  and Chao Liu*. Design Strategies and Systematic Analysis of GaN Vertical MPS Diodes with T-Shaped Shielding Rings.  Semiconductor Science and Technology, 2024

83. Yizheng Tang, Ying Qi, Yunshu Lu, Shuti Li*, and Chao Liu*. Improved hole injection for AlGaN-based DUV LEDs with graded-composition multiple quantum barrier insertion layers. Applied Optics, 2024

82. Yipin Gao, Wentao Tian, Ying Qi, Shuti Li*, and Chao Liu*. Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs. Semiconductor Science and Technology, 2024

81. Hang Chen , Sihao Chen , Heng Wang , Man Hoi Wong  and Chao Liu*. Design Strategy of Vertical GaN Power SBDs with p-GaN JTE and Experimental Demonstration of Selective p-Doping by Implantation.  Physica Status Solidi A: Applications and Materials Science, 2024

80. 高楠，房玉龙，王波，韩颖，张志荣，尹甲运，刘超*. 高掺杂低位错p型GaN材料生长研究. 半导体技术, 2024

79. Hongjie Shao , Yongchen Ji , Xuyang Liu  and Chao Liu*. GaN Vertical Trench Gate Power MOSFET with embedded p-type shielding rings beneath the gate trench.  14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17, 2023

78. Yuchuan Ma , Heng Wang , Sihao Chen  and Chao Liu*. 1.2 kV-class Vertical GaN Power MOSFETs with Monolithically Integrated Freewheeling Merged P-i-N Schottky Diodes.  14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17, 2023

77. Wentao Tian , Mengran Liu , Shuti Li  and Chao Liu*. Improved hole injection efficiency in AlGaN DUV LEDs with minimized band offset at the p-EBL/hole supplier interface.  14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17, 2023

76. Mingyan Wang , Yuanjie Lv , Heng Zhou , Peng Cui , Chao Liu  and Zhaojun Lin*. Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT.  IEEE Electron Device Letters, 2023

75. Heng Zhou , Yuanjie Lv , Chao Liu , Ming Yang , Zhaojun Lin* , Yang Liu  and Mingyan Wang. Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors.  Solid-State Electronics,  212, 108833, 2023

74. Wentao Tian , Mengran Liu , Shuti Li  and Chao Liu*. Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator.  Optical Materials Express,  2023

73. Mingyan Wang , Yuanjie Lv , Heng Zhou , Zuokai Wen , Peng Cui , Chao Liu , Zhaojun Lin*, A Hybrid Simulation Technique To Investigate Bias-dependent Electron Transport And Self-Heating In AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, 2023

72. Mengran Liu, Wentao Tian, and Chao Liu*, Simultaneously improved hole injection and current uniformity in AlGaN-based deep ultraviolet light-emitting diodes, Optical Materials Express, 2023

71. Wentao Tian, Mengran Liu, Shuti Li, and Chao Liu*, Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface, Optical Materials Express, in press, 2023

70. Sheng Lin, Tingjun Lin, Wenliang Wang*, Chao Liu, and Yao Ding*, High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes, Materials, 16, 4569, 2023

69. Xuyang Liu, Yingbin Qiu, and Chao Liu*, Analytical Model and Design Strategy for GaN Vertical Schottky Diodes with embedded monolayer and multilayer floating islands, Compound Semiconductor Week (CSW), Jeju, Korea, May 29 - June 2, 2023

68. 高一品，刘超*. p-EBL 中低 Al 组分插入层对 AlGaN 基深紫外LED 光电性能的影响. 微纳电子与智能制造, 2023

67. Xuyang Liu, Sihao Chen, Hang Chen, Yingbin Qiu, and Chao Liu*, Analytical Model and Design Strategy for GaN Vertical Floating Island Schottky Diodes, IEEE Transactions on Electron Devices, 69, 3079, 2022

66. Heng Wang, Sihao Chen, Hang Chen,  and Chao Liu*,  Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes towards Alleviated Electric Field Crowding and Efficient Carrier Injection, IEEE Journal of the Electron Devices Society, 10, 504, 2022

65. Yongchen Ji, Mengran Liu, and Chao Liu*, Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light emitting diodes with locally embedded p-i-n junctions, Applied Optics, 61, 6961, 2022

64. Mengran Liu, and Chao Liu*, Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface, IEEE Photonics Journal, 14, 8228005, 2022

63. Jian Yin, Sihao Chen, Hang Chen, Shuti Li, Houqiang Fu*, and Chao Liu*, Design space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling, Electronics, 11, 1972, 2022

62. Congcong Deng, Fei Chen,Chao Liu,Qing Liu,Kai Chen,Can Zou,Zixuan Zhao,Yu Zhu,Xingfu Wang, Fangliang Gao*, Shuti Li*, Realization of specific localized surface plasmon resonance in Au-modified Ni nanoplasmonics for efficient detection，Applied Surface Science, 586, 152288, 2022

61. Sihao Chen, Hang Chen, Yingbin Qiu, and Chao Liu*, Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode with p-GaN Shielding Rings, IEEE Transactions on Electron Devices, 68, 5707, 2021

60. Mengran Liu, Yongchen Ji, Hang Zhou, Changsheng Xia, Zihui Zhang, and Chao Liu*,  Sheet charge engineering towards an efficient hole injection in 290 nm deep ultraviolet light-emitting diodes, IEEE Photonics Journal, 13, 8200308, 2021

59. Yu Zhang, Chao Liu, Min Zhu,Yuliang Zhang, Xinbo Zou*, A review on GaN-based two-terminal devices grown on Si substrates, Journal of Alloys and Componds, 869, 159214, 2021

58. Riyaz Abdul Khadar, Alessandro Floriduz , Chao Liu, Reza Soleimanzadeh, and Elison Matioli, Quasi-vertical GaN-on-Si reverse blocking power MOSFETs, Applied Physics Express, 14, 046503, 2021

57. Riyaz Abdul Khadar*, Chao Liu, Reza Soleimanzadeh, and Elison Matioli*, Fully-vertical GaN-on-Si power MOSFETs, IEEE Electron Device Letters, 40, 443, 2019, featured by online magazine "Semiconductor Today"

56. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, Vertical GaN-on-Si MOSFETs with Monolithically Integrated Freewheeling Schottky Barrier Diodes, IEEE Electron Device Letters, 39, 1034, 2018 (featured by online magazine "Semiconductor Today" on 29th, June, 2018) (The top 5 most popular papers since Jun. 2018)

55. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, GaN-on-Silicon Quasi-Vertical Power MOSFETs, IEEE Electron Device Letters, 39, 71, 2018 (featured by online magazine "Semiconductor Today" on 18th, January 2018)(feature article)

54. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, 645 V Quasi-Vertical GaN Power Transistors on silicon substrates, 30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018

53. Chao Liu*, Riyaz Abdul Khadar, and Elison Matioli*, Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode, Compound Semiconductor Week (CSW), Boston, USA, May 29 - June 1, 2018

52. Riyaz Abdul Khadar*, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng and Elison Matioli*, 820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2, IEEE Electron Device Letters, 39, 401, 2018 (editor's pick, featured on cover)

51. Huaxing Jiang, Chao Liu, Kar Wei Ng, Chak Wah Tang, and Kei May Lau*, High Performance AlGaN/GaN/Si Power MOSHEMTs with ZrO2 Gate Dielectric, IEEE Transactions on Electron Devices, 12, 5337, 2018

50. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau*, Voltage-controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters, IEEE Electron Device Letters, 39, 224, 2018 (featured by IEEE Spectrum)

49. Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau*, Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy, Optics Letters, 43, 3401, 2018

48. Xing Lu*, Chao Liu, Huaxing Jiang, Xinbo Zou, and Kei May Lau, High-Performance Monolithically Integrated GaN Driving VMOSFET on LED, IEEE Electron Device Letters, 38, 752, 2017 (featured by online magazine "Semiconductor Today" 28 April 2017)

47. Jie Ren*, Chao Liu, Chak Wah Tang, Kei May Lau, and Johnny K.O. Sin, A Novel Si-GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode, IEEE Electron Device Letters, 38, 501, 2017 (featured by online magazine "Semiconductor Today" on 22th, February 2017)

46. Huaxing Jiang, Chao Liu, Xing Lu, Yuying Chen, Chak Wah Tang, and Kei May Lau*, Investigation of In-situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs, IEEE Transactions on Electron Devices, 64, 832, 2017

45. Jie Ren*, Chao Liu, Yuying Chen, Chak Wah Tang, Kei May Lau, and Johnny K.O. Sin, Switching characteristics of monolithically integrated Si- GaN cascoded rectifiers, 29th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Royton Sapporo, Sapporo, Japan, May 28–June 1, 2017

44. Chao Liu, Yuefei Cai, Xinbo Zou, and Kei May Lau*, Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode, IEEE Photonics Technology Letter, 28, 1130, 2016 (featured by IEEE Spectrum)

43. Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau*, Optimization of a common buffer platform for monolithic integration of InGaN/GaN light- emitting diodes and AlGaN/GaN high electron mobility transistors, Journal of Electronic Materials, 45, 2092, 2016

42. Xing Lu*, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, Monolithic Integration of Enhancement-mode Vertical Driving Transistors on a Standard InGaN/GaN Light Emitting Diode Structure, Applied Physics Letters, 109, 053504, 2016

41. Xing Lu*, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate, Applied Physics Express, 9, 031001, 2016 (featured by online magazine "Compound Semiconductor" in Vol. 22, issue, 3, April/May, 2016)

40. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau*, Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing, Semiconductor Science and Technology, a31, 055019, 2016

39. Huaxing Jiang, Xing Lu, Chao Liu, and Kei May Lau, Off‐state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si, Physica status solidi (a), 213, 868, 2016

38. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau, Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device, International workshop on Nitride Semiconductors (IWN 2016), Orlando, USA, October 2-7, 2016

37. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016

36. Tongde Huang*, Chao Liu, Johan Bergsten, Huaxing Jiang, Kei May Lau, and Niklas Rorsman, Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-First Process, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016

35. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau*, Effective suppression of Current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation, International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH), Miami, Florida, USA, May 16-19, 2016

34. Kun Yu, Chao Liu, Huaxing Jiang, Xing Lu, Kei May Lau, and Anping Zhang, Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs, International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Miami, Florida, USA, May 16-19, 2016

33. Chao Liu, Huaxing Jiang, Yuefei Cai, and Kei May Lau*, Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects, Compound Semiconductor Week (CSW), Toyama, Japan, Jun 26-30, 2016

32. Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau, Improved performance of AlGaN/GaN HEMTs by O2-plasma and HCl surface treatment, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

31. Xing Lu, Jun Ma, Huaxing Jiang, Chao Liu, Peiqiang Xu and Kei May Lau*, Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric, IEEE Transactions on Electron Devices, 62, 1862, 2015

30. Huaxing Jiang, Xing Lu, Chao Liu, and Kei May Lau, Off-state Drain Leakage Reduction by Post Metallization Annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Silicon, Compound Semiconductor Week (CSW), Santa Barbara, California, USA, June 2015

29. Chao Liu, Yuefei Cai, and Kei May Lau*, Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

28. Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, and Kei May Lau*, Buffer optimization of monolithically integrated HEMT-LED using a metal- interconnection-free scheme, 57th Electronic Materials Conference (EMC),Columbus, Ohio, USA, Jun 24-26, 2015

27. Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, and Kei May Lau*, Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors, Applied Physics Letters, 106, 181110, 2015 (featured by online magazine "Semiconductor Today" on 20th, May 2015) (Influential Papers picked by editor, July, 2015)

26. Huaxing Jiang, Chao Liu, Xing Lu, and Kei May Lau, Control of threshold voltage in ultrathin-barrier AlGaN/GaN based MISHEMTs with low-frequency SiNx gate dielectric and Al2O3 interfacial layer, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

25. Jie Ren, Chao Liu, Kei May Lau, and Johnny K. O. Sin, Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration, 11th International Conference on Nitride Semiconductors (ICNS), Beijing, China, Aug 30 - Sep, 4, 2015

24. Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, and Kei May Lau*, Improved breakdown characteristics of monolithically integrated III-nitride HEMT- LED devices using carbon doping, Journal of Crystal Growth, 414, 243, 2015

23. Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Shuti Li*, Reduced droop effect in nitride light emitting diodes by taper shaped electron blocking layer, IEEE Photonics Technology Letters, 26,1368, 2014

22. Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Yian Yin, Shuti Li*, Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer, IEEE Photonics Technology Letters, 26,134, 2014

21. Xing Lu, Jun Ma, Huaxing Jiang, Chao Liu, and Kei May Lau*, Low trap states in in-situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition, Applied Physics Letters, 105, 102911, 2014

20. Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, and Kei May Lau*, Improved breakdown characteristics of monolithically integrated III-nitride HEMT- LED devices using carbon doping, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13- 18, 2014

19. Jun Ma, Xing Lu, Huaxing Jiang, Chao Liu, and Kei May Lau*, In situ growth of SiNx as gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition, Applied Physics Express, 7, 091002, 2014

18. Zhaojun Liu, Tongde Huang, Jun Ma, Chao Liu, and Kei May Lau*, Monolithic Integration of AlGaN/GaN HEMTs on LEDs (HEMT-LEDs) by MOCVD, IEEE Electron Device Letters, 35, 330, 2014

17. Zhaojun Liu, Jun Ma, Tongde Huang, Chao Liu, and Kei May Lau*, Selective epitaxial growth of monolithically integrated GaN-based light-emitting diodes with AlGaN/GaN driving transistors, Applied Physics Letters, 104,091103, 2014 (featured by online magazine "Semiconductor Today" on 21st, Mar, 2014)

16. Jun Ma, Xing Lu, Tongde Huang, Chao Liu, and Kei May Lau*, Improved buffer resistivity for GaN-based HEMTs using a medium-temperature and low-pressure GaN insertion layer, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE), Lausanne, Switzerland, July 13-18, July, 2014

15. Xingfu Wang,Yong Zhang,Xinman Chen,Miao He, Chao Liu, Yian Yin, Xianshao Zou and Shuti Li*, Ultrafast, super high gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire, Nanoscale, 6, 12009, 2014

14. Danwei Li, Jiasheng Diao, Xiangjing Zhuo, Jun Zhang, Xingfu Wang, Chao Liu, Bijun Zhao, Kai Li, Lei Yu, Yuanwen Zhang, Miao He, and Shuti Li*, High quality crack-free GaN film grown on Si (111) substrate without AlN interlayer, Journal of crystal growth, 47, 58, 2014

13. Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang and Shuti Li*, Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties, Chemical Communications, 50, 682, 2014

12. Zhiwei Ren, Chao Liu, Xin Chen, Bijun Zhao, Xinfu Wang, Jinhui Tong, Jun Zhang, Xiangjing Zhuo, Danwei Li, Hanxiang Yi and Shuti Li*, Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well, Optics Express, 21, 7118, 2013

11. Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Yian Yin, Shuti Li*, Advantage of an InGaN based light emitting diodes with p-InGaN/p- GaN superlattice hole accumulation layer, Chinese Physics B, 22, 058502, 2013

10. Chao Liu, Taiping Lu, Lejuan Wu, Hailong Wang, Yian Yin, Guowei Xiao, Yugang Zhou, and Shuti Li*, Enhanced Performance of Blue Light-Emitting Diodes with InGaN/GaN Superlattice as Hole Gathering Layer, IEEE Photonics Technology Letters, 24, 1239, 2012

9. Jinhui Tong, Shuti Li*, Taiping Lu, Chao Liu, Hailong Wang, Lejuan Wu, Bijun Zhao, Xingfu Wang, and Xin Chen, Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers, Chinese Physics B, 21,118502, 2012

8. Taiping Lu, Shuti Li*, Chao Liu, Kang Zhang, Yiqin Xu, Jinhui Tong, Lejuan Wu, Hailong Wang, Xiaodong Yang, Yian Yin, Guowei Xiao, and Yugang Zhou, Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer, Applied Physics Letters, 100, 141106, 2012

7. Lejuan Wu, Shuti Li*, Chao Liu, Tai-Ping Lu, Guo-Wei Xiao, Yu-Gang Zhou, Yi-An Yin, Simulation study of blue InGaN multiple quantum wells light- emitting diodes withdifferent hole injection layer, Chinese Physics B, 21, 068506, 2012

6. Chao Liu, Taiping Lu, Zhiwei Ren, Xin Chen, Bijun Zhao, Yian Yin, Jinhui Tong, and Shuti Li*, Study of blue InGaN multiple quantum well light- emitting diodes with p-type quantum barriers, Asian Communication and Photonics Conference (ACP), Guangzhou, China, Nov 7-10, 2012

5. Taiping Lu, Shuti Li*, Kang Zhang, Chao Liu, Guowei Xiao, Yugang Zhou, Shu-Wen Zheng, Yi-An Yin, Le-Juan Wu, Hai-Long Wang, and Xiao-Dong Yang, Simulation study of blue InGaN light-emitting diodes with dip-shaped quantum wells, Chinese Physics B, 20, 108504, 2011

4. Taiping Lu, Shuti Li*, Kang Zhang, Chao Liu, Yi-An Yin, Le-Juan Wu, Hai-Long Wang, Xiao-Dong Yang, Guo-Wei Xiao, and Yu-Gang Zhou, Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes, Optics Express, 19,18319, 2011

3. Taiping Lu, Shuti Li*, Kang Zhang, Chao Liu, Guowei Xiao, Yugang Zhou, Shu-Wen Zheng, Yi-An Yin, Le-Juan Wu, Hai-Long Wang, and Xiao-Dong Yang, The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer, Chinese Physics B, 20, 098503, 2011

2. Shuti Li*, Chao Liu, Guo-Guang Ye, Guo-Wei Xiao, Yu-Gang Zhou, Jun Su, Guang-Han Fan, Yong Zhang, Fu-Bo Liang and Shu-Wen Zheng. Study of GaP single crystal layers grown on GaN by MOCVD, Materials Research Bulletin, 46,1942, 2011

1. Shuti Li*, Jun Su, Guanghan Fan, Chao Liu, Jian-Xing Cao, Yi-An Yin, GaP: Mg layers grown on GaN by MOCVD, Journal of Crystal Growth, 312,3101, 2010

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2021-课题组参与起草的《山东省第三代半导体产业发展“十四五”规划》发布，重点推动“垂直型GaN功率器件”研发

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