Paper Publications
Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate
  • Journal:
    Physica E: Low-dimensional Systems and Nanostructures
  • First Author:
    Peng Cui
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Yuping Zeng
  • Volume:
    134
  • Page Number:
    114821
  • Translation or Not:
    no
  • Included Journals:
    SCI
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