崔鹏，教授，博士生导师，齐鲁青年学者。2018年6月获山东大学微电子学院博士学位。2018年7月至2021年7月在美国特拉华大学电子与计算机工程系从事博士后研究。主要研究方向为半导体器件，包括功率器件、射频器件、光电器件等，迄今为止，在本领域权威期刊发表学术论文70余篇，第一作者SCI论文27篇，申请/授权国家发明专利30项。主持国家自然科学基金、山东省优秀青年基金（海外）、山东省自然科学基金、山东省重大科技创新工程课题等多项科研项目。

每年招收博士研究生1名，硕士研究生2-3名；欢迎微电子、集成电路、物理方向的同学联系。邮箱: pcui@sdu.edu.cn；电话 0531-88362488

• 2021-11 — Now
  新一代半导体集成攻关大平台山东大学
  教授
• 2018-07 — 2021-07
  特拉华大学

1. 氮化镓功率器件

2. 碳化硅功率器件

3. 氮化镓射频器件

(1)陈思衡. High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V .IEEE Electron Device Letters .2024 ,12 (45):2343

(2)罗鑫. Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer .Applied Physics Letters .2024 ,125 (12)

(3)王鸣雁. Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs .Applied Physics Letters .2024 (125)

(4)王鸣雁. Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs .Applied Physics Letters .2024 (124)

(5)王鸣雁. Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs .IEEE ACCESS .2024 (12)

(6)王明绪. Toward low-power-consumption source-gated phototransistor .APPLIED PHYSICS LETTERS .2024 (124)

(7)陈思衡. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing .Solid-State Electronics .2024 ,213

(8)罗鑫. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors .Journal of Physics and Chemistry of Solids .2024 ,187

(9)张斌. The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode .IEEE Transactions on Electron Devices .2024 (1)

(10)Jiang, Guangyuan. Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack .SOLID-STATE ELECTRONICS .2023 ,201

(11)王鸣雁. Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT .IEEE Electron Device Letters .2023 (12)

(12)周衡. Study on the frequency characteristics of split-gate AlGaN/GaN HFETs .Modern Physics Letters B .2023 (无)

(13)王鸣雁. A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs .IEEE Transactions on Electron Devices .2023 :1-5

(14)崔鹏. Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors .MICROELECTRONICS JOURNAL .2022 ,129 (1):105602

(15)崔鹏. Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment .Crystals .2022 ,12 (11):1521

(16)崔鹏. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications .Scientific Reports .2022 ,12 (1):16683

(17)周衡. Study of electrical transport properties of GaN-based side-gate heterostructure transistors .APPLIED PHYSICS LETTERS .2022 (21)

(18)王鸣雁. Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs .IEEE Electron Device Letters .2022 (12)

(19)Peng Cui. Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation .Nanomaterials .2022 (12):1718

(20)Peng Cui. Improved On/Off Current Ratio and Linearity of InAlN/GaN HEMTs with N2O Surface Treatment for Radio Frequency Application .ECS Journal of Solid State Science and Technology .2021 ,10 :065013

(21)Peng Cui. Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current .Solid-State Electronics .2021 ,185 :108137

(22)Jie Zhang. Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor .2021 Device Research Conference (DRC) .2021 :1-2

(23)Peng Cui. HZO/InAlN/GaN MIS-HEMT on Silicon with SS of 60 mV/dec and fT /fmax of 115/200 GHz .2021 Device Research Conference (DRC) .2021

(24)Peng Cui. Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate .Physica E: Low-dimensional Systems and Nanostructures .2021 ,134 :114821

(25)Jie Zhang. High-Performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics .2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) .2021 :1-3

(26)Jie Zhang. One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process .IEEE Electron Device Letters .2021 ,42 (4):521

(27)Peng Cui. InAlN/GaN HEMT on Si with fmax = 270 GHz .IEEE Transactions on Electron Devices .2021 ,68 (3):994

(28)Guangyang Lin. Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate .Journal of Alloys and Compounds .2020 ,858 (25):157653

(29)Qi Cheng. RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon .Solid-State Electronics .2020 ,172 :107885

(30)Peng Cui. Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs .IEEE Electron Device Letters .2020 ,41 :1185

(31)Guangyang Lin. Fabrication of a polycrystalline SiGe-and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate .Semiconductor Science and Technology .2020 ,35 (9):095016

(32)Guangyang Lin. Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment .Journal of Physics D: Applied Physics .2020 ,53 (41):415106

(33)Jie Zhang. Ionic doping of TiO2 thin film transistors using superacid treatment .Electronic Mateiral Conference (EMC) .2020

(34)Peng Cui. Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz .2020 Device Research Conference (DRC) .2020

(35)Peng Cui. Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors .Physica E: Low-dimensional Systems and Nanostructures .2020 ,119 :114027

(36)Jie Zhang. Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing .IEEE Transactions on Electron Devices .2020 ,67 (6):2346

(37)Peng Cui. InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric .Japanese Journal of Applied Physics .2020 ,59 (2):020901

(38)Guangyang Lin. Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer .Journal of Physics D: Applied Physics .2019 ,53 (10):105103

(39)Peng Cui. Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors .Journal of Physics D: Applied Physics .2019 ,53 (6):065103

(40)Peng Cui. The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs .Journal of Physics D: Applied Physics .2019 ,52 (46):465104

(41)Peng Cui. High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg .Applied Physics Express .2019 ,12 (10):104001

(42)Jie Zhang. High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric .Applied Physics Express .2019 ,12 (9):096502

(43)Jie Zhang. Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing .IEEE Electron Device Letters .2019 ,40 (9):1463

(44)Kazy F Shariar. Effect of bistrifluoromethane sulfonimide treatment on nickel/InAs contacts .Applied Physics A .2019 ,125 :429

(45)Yuping Zeng. InAs FinFETs performance enhancement by superacid surface treatment .IEEE Transactions on Electron Devices .2019 ,66 (4):1856

(46)Ming Yang. Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors .Journal of Physics and Chemistry of Solids .2018 ,123 :223

(47)Jie Zhang. Hydrogen Silsesquioxane (HSQ) Etching Resistance Dependence on Substrate During Dry Etching .physica status solidi (a) .2018 ,216 (1):1800530

(48)Peng Cui. Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs .Scientific Reports .2018 ,8 :12850

(49) Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2018 ,120 :389

(50)Peng Cui. Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors .Scientific reports .2018 ,8 :9036

(51)Peng Cui. Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors .Applied physics A-Materials Science & Processing .2018 ,123 :359

(52)Chen Fu. The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation .Applied Physics A .2018 ,124 :299

(53)Chen Fu. A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2018 ,113 :160

(54)Peng Cui. Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors .Scientific Reports .2018 ,8 :983

(55)Chen Fu. Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2017 ,111 :806

(56)Peng Cui. Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors .Journal of Applied Physics .2017 ,122 :124508

(57)Yan Liu. Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors .AIP Advances .2017 ,7 :085309

(58)Peng Cui. A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2017 ,110 :289

(59)Peng Cui. Study of Polarization Coulomb Field Scattering Influence on Improved Linearity in AlGaN/GaN Heterostructure Field-Effect Transistors .The 1st International Semiconductor Conference for Global Challenges .2017

(60)Peng Cui. Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors .Chinese Physics B .2017 ,26 (12):127102

(61)Peng Cui. Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs .IEEE Transactions on Electron Devices .2017 ,64 (3):1038

(62)Yan Liu. Study of the parasitic source resistance at the different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors .Chinese Physics B .2017 ,26 (9):097104

(63)Huan Liu. Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2017 ,103 :113

(64)Peng Cui. Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors .Superlattices and Microstructures .2016 ,100 :358

(65)Ming Yang. Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering .IEEE Transactions on Electron Devices .2016 ,63 (10):3908

(66)Ming Yang. Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors .Journal of Applied Physics .2016 ,119 :224501

(67)Ming Yang. Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs .IEEE Transactions on Electron Devices .2016 ,63 (4):1471

(68)Jingtao Zhao. Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes .Applied physics A-Materials Science & Processing .2015 ,121 :1271

(69)Jingtao Zhao. A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors .Applied Physics Letter .2015 ,107

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