Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
MICROELECTRONICS JOURNAL
First Author:
崔鹏
Document Code:
AF538DD88E9340EF99FA18C5BE695D85
Volume:
129
Issue:
1
Page Number:
105602
Number of Words:
3500
Translation or Not:
no
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