穆文祥
副教授
访问次数:
基本信息
  • 教师英文名称:
    Wenxiang Mu
  • 教师拼音名称:
    muwenxiang
  • 出生日期:
    1989-12-13
  • 入职时间:
    2018-11-09
  • 所在单位:
    晶体材料研究院
  • 学历:
    研究生(博士)毕业
  • 办公地点:
    新一代半导体材料研究院
  • 性别:
  • 学位:
    博士生
  • 在职信息:
    在职
  • 毕业院校:
    山东大学
教师简介

穆文祥,副教授,博士生导师。华为浩然学者,小米青年学者,山东大学“青年学者未来计划”获得者。2013年和2018年分别获得山东大学理学学士和工学博士学位。致力于超宽禁带半导体β-Ga2O3单晶的生长、衬底加工、性能优化及器件研究。设计、优化了导模法单晶生长装备,从无到有生长获得了高质量、大尺寸β-Ga2O3单晶,与国内外相关单位开展合作,获得了高性能半导体器件。研究工作获得了国家重点研发计划、国家自然基金重点项目、山东省重大科技创新工程、广东省重点领域研发计划等一系列重大项目资助。在Advanced Materials, Crystal Growth Design,ACS Applied Materials & Interfaces,Applied Physics Letters等杂志发表学术论文60余篇,他引1600余次。申请发明专利15项,并实现千万级成果转化。

教育经历
  • 2009-9 — 2013-6
    山东大学
    化学
    理学学士学位
  • 2013-9 — 2018-6
    山东大学
    材料物理与化学
    工学博士学位
工作经历
  • 2020-09 — 2021-10
    新一代半导体材料研究院
    副教授
  • 2018-11 — 2020-08
    晶体材料研究所
    助理研究员
研究领域

宽禁带半导体材料制备、衬底加工,新型半导体材料探索与器件,光电功能晶体材料制备与性能表征

科研成果
论文

1.  Crystal Structural Editing: Novel Biaxial MgTe2O5 Crystal as Zero‐Order Waveplates.  Advanced Materials,  2025. 

2.  Unraveling the Atomic Mechanism of the Crystalline Phase‐Dependent Structural Features and Special Spectral Design of α‐, β‐, and Ɛ‐Ga2O3.  Advanced Science,  2025. 

3.  Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals.  Science China Materials,  2025. 

4.  徐梦凡. Optimization of oxygen flow rate toward high-quality ε-Ga2O3 thin films grown on sapphire substrates and solar-blind ultraviolet photodetectors.  OPTICAL MATERIALS,  2025. 

5.  王佩. Bent-Shaped Twin Boundary in β-Ga 2 O 3 Crystals.  CRYSTAL GROWTH & DESIGN,  24,  2024. 

6.  欧阳佳慧. High-performance solar-blind photodetector based on Si-doped α-Ga2O3 thin films grown by Mist Chemical Vapor Deposition.  JOURNAL OF ALLOYS AND COMPOUNDS ,  2024. 

7.  王佩. Nucleation kinetics of twins in bulk β-Ga2O3 crystal.  Materials and design,  2024. 

8.  . All-Solution-Processed InGaO/PbI2 Heterojunction for Self-Powered Omnidirectional Near-Ultraviolet Photodetection and Imaging.  Advanced Optical Materials,  2024. 

9.  . Toward Smart, Flexible, and Omnidirectional Self-Powered Photodetection by an All-Solution-Processed In2O3/Pbl2?Heterojunction.  ACS Applied Materials and Interfaces,  2024. 

10.  Yuan, Yuan. Enhancing the performance of β-Ga2O3 solar-blind photodetectors based on ZnGa2O4 substrate by bottom-up Zn diffusion doping.  JOURNAL OF ALLOYS AND COMPOUNDS ,  969,  2023. 

11.  Dong, Xuyang. Solar-blind photodetectors prepared using semi-insulating Co:beta-Ga2O3 single crystals that are stable over a wide temperature range.  Journal of Materials Chemistry C,  11,  8919-8928, 2023. 

12.  杨华荣. Efficient Suppression of Persistent Photoconductivity in β-Ga2O3-Based Photodetectors with Square Nanopore Arrays.  ACS. Appl. Mater. Interfaces,  15,  32561, 2023. 

13.  Yang, Huarong. Efficient Suppression of Persistent Photoconductivity in ss-Ga2O3-Based Photodetectors with Square Nanopore Arrays.  ACS Applied Materials & Interfaces,  15,  32561-32568, 2023. 

14.  Wang, Xiaojie. Rapid epitaxy of 2-inch and high-quality alpha-Ga2O3 films by mist-CVD method.  Journal of Semiconductors,  44,  2023. 

15.  董旭阳. Solar-blind photodetectors prepared using semi-insulating Co:β-Ga2O3 single crystals that are stable over a wide temperature range.  Journal of Materials Chemistry C,  2023. 

16.  . Squeeze-Printing Ultrathin 2D Gallium Oxide out of Liquid Metal for Forming-Free Neuromorphic Memristor.  ACS Applied Materials & Interfaces,  2023. 

17.  Hou, Tong. The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal.  Materials Science in Semiconductor Processing,  158,  2023. 

18.  Chen, Boyang. Growth and characterization of the β-Ga<sub>2</sub>O<sub>3</sub> (011) plane without line-shaped defects.  CRYSTENGCOMM,  25,  2404, 2023. 

19.  王晓杰. Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by Mist-CVD method.  Journal of Semiconductors,  2023. 

20.  陈伯阳. Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects.  CRYSTENGCOMM,  2023. 

21.  Yan, Shiqi. Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (1 0 0) surface.  Applied Surface Science,  610,  2023. 

22.  张洁. Toward smart flexible self-powered near-UV photodetector of amorphous Ga2O3 nanosheet.  MATERIALS TODAY PHYSICS,  2023. 

23.  颜世琪. Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (100) surface.  APPLIED SURFACE SCIENCE,  2023. 

24.  . A High Responsivity and Photosensitivity Self-Powered UV Photodetector Constructed by the CuZnS/Ga2O3 Heterojunction.  先进材料表面Advanced Materials Interfaces,  2202130, 2022. 

25.  Lv, Zunxian. A High Responsivity and Photosensitivity Self-Powered UV Photodetector Constructed by the CuZnS/Ga2O3 Heterojunction.  Advanced Materials Interfaces,  10,  2022. 

26.  穆文祥. 4英寸氧化镓单晶生长与性能.  《人工晶体学报》,  51,  1-5, 2022. 

27.  葛磊. Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer.  Crystals,  12,  2022. 

28.  张洁. Synthesis, mechanism and characterization of urchin-like Ga2O3 microspheres.  CrystEngComm,  2022. 

29.  Wang, Chenlu. Hysteresis-free and μ s-switching of D/E-modes Ga2O3hetero-junction FETs with the BV2/Ron,spof 0.74/0.28 GW/cm2.  APPLIED PHYSICS LETTERS,  120,  2022. 

30.  王士香. Dual-wavelength self-Q-switched mode-locked waveguide lasers based on Nd:LGGG cladding waveguides.  Optical Materials Express,  854, 2022. 

31.  Fu, Bo. Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds.  JOURNAL OF ALLOYS AND COMPOUNDS ,  889,  2022. 

32.  王珣珣. Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction.  IEEE Electron Device Letters,  43,  44, 2022. 

33.  Liu, Jinyang. Pt/ZnGa<sub>2</sub>O<sub>4</sub> Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa<sub>2</sub>O<sub>4</sub> (111) Substrates.  IEEE Electron Device Letters,  43,  2061-2064, 2022. 

34.  王珣珣. Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction.  IEEE Electron Device Letters,  43,  44-47, 2022. 

35.  Fu, Bo. Investigation of the blue color center in beta-Ga2O3 crystals by the EFG method.  CrystEngComm,  23,  8360-8366, 2021. 

36.  付博. Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG?.  JOURNAL OF ALLOYS AND COMPOUNDS ,  2021. 

37.  付博. Investigation of the blue color center in β-Ga2O3 crystals by the EFG method.  CrystEngComm,  2021. 

38.  付博. Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG?method.  CrystEngComm,  8360, 2021. 

39.  付博. Investigation of the blue color center in β-Ga2O3 crystals by the EFG method.  CrystEngComm,  2021. 

40.  Chen, Chen. High-Performance beta-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage.  IEEE Electron Device Letters,  42,  1492, 2021. 

41.  付博. Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method.  CrystEngComm,  2021. 

42.  张晋. New near-infrared optical modulator of Co2+:β-Ga2O3 single crystal.  Optical Materials Express,  2021. 

43.  Zhang, Jin. Broadband near-infrared Cr3+:β-Ga2O3fluorescent single crystal grown by the EFG method.  CrystEngComm,  22,  7654-7659, 2020. 

44.  尹延如. Controllable and directional growth of Er:Lu2O3 single crystals by the edge-defined film-fed technique.  CrystEngComm,  2020. 

45.  穆文祥. Anisotropy and in-plane polarization of low-symmetrical beta-Ga2O3 single crystal in the deep ultraviolet band.  Applied Surface Science,  527,  2020. 

46.  付博. A study on the technical improvement and the crystalline quality optimization of columnar β-Ga2O3 crystal growth by an EFG method.  CrystEngComm,  2020. 

47.  尹延如. Effects of gallium substitution on crystal growth and properties of gehlenite single crystal.  JOURNAL OF ALLOYS AND COMPOUNDS ,  2020. 

48.  尹延如. Effects of gallium substitution on crystal growth and properties of gehlenite single crystal.  JOURNAL OF ALLOYS AND COMPOUNDS ,  823,  2020. 

49.  贾志泰 , 陶绪堂  and 穆文祥. Anisotropy and In-Plane Polarization of Low-Symmetrical β-Ga2O3 Single Crystal in the Deep Ultraviolet Band.  Applied Surface Science,  2020. 

50.  贾志泰 , 张健 , 陶绪堂  and 尹延如. Effects of gallium substitution on crystal growth and properties of gehlenite single crystal.  JOURNAL OF ALLOYS AND COMPOUNDS,  2020. 

51.  胡强强 , 贾志泰 , 尹延如 , 穆文祥 , 张健  and 陶绪堂. Crystal growth, thermal and optical properties of TSLAG magneto-optical crystals.  JOURNAL OF ALLOYS AND COMPOUNDS ,  2019. 

52.  辛倩 , 陶绪堂 , 宋爱民 , 徐明升 , 穆文祥 , 贾志泰 , 王鑫煜  and 辛公明. Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode.  Semiconductor Science and Technology,  2019. 

53.  贾志泰 , 穆文祥 , 尹延如 , 张健 , 陶绪堂  and 付博. A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism.  Journal of Semiconductors,  2019. 

54.  贾志泰 , 尹延如 , 张健 , 陶绪堂  and 穆文祥. Solid–liquid interface optimization and properties of ultra-wide bandgap β-Ga2O3 grown by Czochralski and EFG methods.  CrystEngComm1,  2762, 2019. 

55.  陶绪堂 , 宋爱民 , 辛倩 , 徐明升 , 穆文祥 , 王鑫煜 , 辛公明 , 贾志泰  and 杜路路. High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact.  IEEE Electron Device Letters,  40,  451, 2019. 

56.  Chen, Xuanhu. Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on beta-Ga2O3 Single Crystals.  ACS Applied Materials & Interfaces,  11,  7131, 2019. 

57.  穆文祥. Solid-liquid interface optimization and properties of ultra-wide bandgap β-Ga2O3 grown by Czochralski and EFG methods.  CrystEngComm,  21,  2762-2767, 2019. 

58.  陶绪堂 , 贾志泰 , 尹延如 , 胡强强 , 李阳 , 张健  and 穆文祥. Ti-Doped beta-Ga2O3: A Promising Material for Ultrafast and Tunable Lasers.  Crystal growth & Design,  18,  3037, 2018. 

59.  尹延如. Development of longer Nd:LGGG crystal for high power laser application.  Journal of Crystal Growth,  2017. 

60.  贾志泰 , 穆文祥 , 尹延如 , 张健  and 陶绪堂. 导模法生长高质量氧化镓单晶的研究.  《人工晶体学报》,  46,  193, 2017. 

61.  贾志泰 , 高泽亮 , 张健 , 陶绪堂  and 尹延如. Mechanism of Surface Cracking in a Ca12Al14O33 Crystal during the Cooling Process.  CRYSTAL GROWTH & DESIGN,  2016. 

专利
版权所有   ©山东大学 地址:中国山东省济南市山大南路27号 邮编:250100 
查号台:(86)-0531-88395114
值班电话:(86)-0531-88364731 建设维护:山东大学信息化工作办公室