Yifei Philip Zhang
Professor
Visit:次
Paper Publications
Home
Schottky-barrier thin-film transistors based on HfO2-capped InSe
  • Journal:
    Appl. Phys. Lett.
  • All the Authors:
    J. Zhang, G. Liang, Y. Shi, Y. Zhang, Z. R. Kudrynskyi, Z. D. Kovalyuk, A. Patane, Q. Xin*, and A. Song*
  • First Author:
    Y. Wang
  • Volume:
    115
  • Issue:
    33502
  • Translation or Not:
    no
  • Date of Publication:
    2019-01-01

Pre One:Solution-Processed TiO2-Based Schottky Diode with a Large Barrier Height

Next One:Unipolar nano-diode detector with improved performance using high-k material SiNx

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University