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Main positions:纳电子工程与技术研究中心副主任
Other Post:IEEE高级会员、山东省电子学会专委会秘书长
Degree:Doctoral Degree in Philosophy
Status:Employed
School/Department:集成电路学院

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Philip Zhang

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Gender:Male

Education Level:Postgraduate (Doctoral)

Alma Mater:University of Delaware

Paper Publications

Current position: Home / Scientific Research / Paper Publications
Schottky-barrier thin-film transistors based on HfO2-capped InSe
Date of Publication:2019-01-01 Hits:

Journal:Appl. Phys. Lett.
All the Authors:J. Zhang, G. Liang, Y. Shi, Y. Zhang, Z. R. Kudrynskyi, Z. D. Kovalyuk, A. Patane, Q. Xin*, and A. Song*
First Author:Y. Wang
Volume:115
Issue:33502
Translation or Not:no
Date of Publication:2019-01-01
Date of Publication:2019-01-01

Pre One:Solution-Processed TiO2-Based Schottky Diode with a Large Barrier Height

Next One:Unipolar nano-diode detector with improved performance using high-k material SiNx

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