Yifei Philip Zhang
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Solution-Processed TiO2-Based Schottky Diode with a Large Barrier Height
  • Journal:
    IEEE Electron Device Lett.
  • All the Authors:
    W. Cai, J. Zhang, J. Brownless, J. Wilson, Y. Zhang, and A. Song*
  • First Author:
    X. Zhang
  • Volume:
    40
  • Issue:
    9
  • Page Number:
    1378-1381
  • Translation or Not:
    no
  • Date of Publication:
    2019-01-01

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