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Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films.

Release Time:2026-04-01
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Title of Paper:
Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films.
Journal:
ACS Applied Electronic Materials
DOI Number:
10.1021/acsaelm.2c00608
Translation or Not:
No
Date of Publication:
2022-07
Links to Published Journals:
https://pubs.acs.org/doi/full/10.1021/acsaelm.2c00608
Release Time:
2026-04-01