电子邮箱：
徐柏瀚，山东大学集成电路学院助理研究员，硕士生导师。主要从事铪基/锆基铁电薄膜及其在非易失性存储器中的器件应用研究。博士及博士后阶段于德国德累斯顿工业大学（TU Dresden）及 NaMLab 研究所完成，师从 Thomas Mikolajick 教授与 Uwe Schroeder 博士，并深度参与了德国科学基金会（DFG）项目及与英特尔、英飞凌、三星等半导体企业的合作项目。此前在德国达姆施塔特工业大学（TU Darmstadt）攻读硕士学位期间，于 Jürgen Rödel 教授课题组从事无铅反铁电材料研究。迄今共发表 SCI 论文 20 余篇，其中以第一/通讯作者在《Advanced Functional Materials》、《Small》、《ACS Applied Materials & Interfaces》等高影响力期刊发表多篇论文。此外，还受邀参与了铪基铁电领域首部系统性专著《Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices》（第二版）的编撰工作，合著并主编其中两个章节。欢迎对相关研究方向感兴趣的同学联系咨询，也期待与学界业界同仁进行交流合作。电子邮箱：bohanxu@sdu.edu.cn
山东大学 ，集成电路学院 ，助理研究员
德累斯顿工业大学（TU Dresden） ，NaMLab gGmbH ，研究员/博士后
| 类别 | 专业 | 简介 | 人数 | 年份 |
|---|---|---|---|---|
|
硕士研究生招生 |
集成电路、微电子、材料、物理 |
2026年计划招收1名硕士研究生，同时也欢迎对相关领域感兴趣的本科生同学加入。 |
1 |
2026 |
| 名称 | 简介 |
|---|---|
|
铪/锆基铁电薄膜及存储器件 |
铪/锆基铁电薄膜及存储器件
|
【1】Revealing the role of B-site cations in the antiferroelectricity of NaNbO3-based perovskites.Journal of the European Ceramic Society,2025.
【2】Interaction Between Strain and Phase Formation in HfxZr1-xO2 Thin Films.Small,2025.
【3】A Ferroelectric CMOS Microelectrode Array with ZrO2 Recording and Stimulation Sites for In-Vitro Neural Interfacing.2024 IEEE BioSensors Conference (BioSensors),2024.
【4】Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors.ACS Applied Electronic Materials,2024.
【5】Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics.ACS Applied Materials & Interfaces,2024.
【6】Mechanism of Antiferroelectricity in Polycrystalline ZrO2.Advanced Functional Materials,2024.
【7】Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2.ACS Applied Materials & Interfaces,2024.
【8】Voltage Programmable Pyroelectric Sensors With ZrO₂-Based Antiferroelectrics.IEEE Sensors Journal,2024.
【9】Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2.Advanced Functional Materials,2023.
【10】Discovery of Nanoscale Electric Field-Induced Phase Transitions in ZrO2.Advanced Functional Materials,2023.
【11】Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition.Journal of Applied Physics,2023.
【12】Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films.ACS Applied Electronic Materials,2023.
【13】Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2-Based Ferroelectric Capacitors.Advanced Materials Interfaces,2023.
【14】Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface.Nanotechnology,2023.
【15】The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2 Capacitors.2022 International Electron Devices Meeting (IEDM),2023.
【16】Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers.Journal of Applied Physics,2022.
【17】Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films.ACS Applied Materials & Interfaces,2022.
【18】Investigating charge trapping in ferroelectric thin films through transient measurements.Frontiers in Nanotechnology,2022.
【19】Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films.ACS Applied Electronic Materials,2022.
