Journal:IEEE Electron Device Letters

Key Words:Gallium nitride, vertical, quasi-vertical transistors, GaN-on-Si, power, semiconductor, MOSFETs, freewheeling, SBDs, diodes

Abstract:We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n+-GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and
simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 108 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm2, a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

All the Authors:Riyaz Abdul Khadar

Indexed by:Journal paper

Correspondence Author:Chao Liu,Elison Matioli

Volume:39

Page Number:1034

Translation or Not:no

Date of Publication:2018-08-01

Included Journals:SCI

C. Liu et al. VMOSFET+SBD.pdf Download []Times