Journal:IEEE Transactions on Electron Devices

Key Words:Analytical model, breakdown voltage, device design, floating island (FI), gallium nitride, specific ON resistance, vertical Schottky barrier diodes (SBDs)

Abstract:We report GaN-based vertical Schottky barrier diodes (SBDs) with embedded floating islands (FIs). The incorporation of the FI structure can break the theoretical limit of unipolar vertical GaN devices by homogenizing the electric field distribution within the drift layer. To facilitate comprehensive understanding and structural design of the FI SBDs, analytical models for both conducting state and blocking state of the GaN FI SBDs are established and verified by TCAD simulation. Parametric optimization for the reverse characteristics of the GaN FI SBDs is also carried out systematically. We found that the doping concentration, height of the p-GaN FIs, and the spacing between the adjacent p-GaN FIs are closely associated with the electric field distribution and the reverse breakdown characteristics of the vertical FI SBDs. An optimum breakdown voltage and Baliga’s figure of merit (FOM) of 1956 V and 4.8 GW/cm2 can be achieved, which are 73.6 % and 72.7% larger than those of the conventional planar SBDs. The results can provide systematic design guidelines for GaN vertical power electronic systems towards high-voltage, high-speed, and high-power applications.

All the Authors:Sihao Chen,Hang Chen,Yingbin Qiu

First Author:Xuyang Liu

Indexed by:Journal paper

Correspondence Author:Chao Liu

Document Type:J

Volume:69

Issue:6

Page Number:3079

Translation or Not:no

Date of Publication:2022-04-01

Included Journals:SCI

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