Journal:Electronics

Key Words:GaN; vertical power devices; breakdown voltage; device optimization; trench junction barrier Schottky diodes

Abstract:We report gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and systematically analyzed the effects of the key design parameters on the reverse and forward characteristics of the devices. By taking advantage of the shielding effects from both the trenches and pn junctions in the TJBS structure, the high electric field at the Schottky contact region can be effectively suppressed. We found that the doping concentration, thickness, and spacing of p-GaN, as well as the depth and angle of the trench sidewalls are closely associated with the electric
field distribution and the reverse characteristics of the TJBS diodes. With an optimal set of design parameters, the local electric field crowding at either the corner of the trench or the edge of the p-GaN can also be alleviated, resulting in a boosted breakdown voltage of up to 1250 V in the TJBS diodes. In addition, an analytical model was developed to explore the physical mechanism behind the forward conduction behaviors. We believe that the results can provide a systematical design strategy for the development of low-loss, high-voltage, and high-power GaN power diodes towards an efficient power system.

All the Authors:Sihao Chen,Hang Chen,Shuti Li

First Author:Jian Yin

Indexed by:Journal paper

Correspondence Author:Houqiang Fu,Chao Liu

Document Type:J

Volume:11

Page Number:1972

Translation or Not:no

Date of Publication:2022-06-01

Included Journals:SCI

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