Journal:Japanese Journal of Applied Physics

Abstract:Shielding ring (SR) structures are widely employed beneath the gate trench of vertical trench gate metal-oxide-semiconductor field-effect transistors (MOSFETs) for the purpose of enhancing the gate oxide reliability and avoiding premature breakdown. To facilitate an in-depth understanding of the vertical power MOSFETs with p-type SRs (SR-MOSFETs), we numerically investigated the influence of the key parameters on the static characteristics of GaN-based vertical power SR-MOSFETs by TCAD simulation. We comprehensively elucidated the reach-through and non-reach through behaviors in the SR structures with different thicknesses, widths, and p-doping concentrations. We also illustrated the quasi-saturation effect by analyzing the 2-D electron distribution and current density at the pinch-off point. With the same off-state voltage levels as conventional vertical MOSFETs, the SR-MOSFETs feature reduced on-state resistance and improved switching performance, which can provide theoretical guidance towards the development of high performance vertical GaN power MOSFETs.

All the Authors:Yongchen Ji,Xuyang Liu,Heng Wang

First Author:Hongjie Shao

Indexed by:Journal paper

Correspondence Author:Chao Liu

Translation or Not:no

Date of Publication:2024-03-01

Included Journals:SCI