Journal:IEEE Electron Device Letters

Key Words:Breakdown voltage, lateral insulated gate bipolar transistor (LIGBT), super junction, super field plate

Abstract:The concept and basic theory of Super Field Plate (SuFP) technique is proposed and systematically investigated in our previous work. In this work, the performance of SuFP technique is experimentally studied for the first time based on a lateral insulated gate bipolar transistor (LIGBT). Our investigations proposed a SuFP design method that can achieve charge balance effect in the whole drift region with the existence of the substrate assistant depletion effect. As a result, the SuFP-LIGBT with 30μm drift region achieved uniform electric field distribution and 563.6V breakdown voltage (BV), which is 38.1% larger than that of LIGBT based on conventional field plate technique. It is noteworthy that the voltage blocking capability of the SuFP-LIGBT reaches 18.8V/μm and is almost the same as that of the super junction technique. Furthermore, as a kind of field plate, the SuFP technique is fully compatible with fabrication processes and would not increase the fabrication cost. Therefore, the SuFP-LIGBT has excellent voltage blocking capability and the SuFP is a promising technique for LIGBT.

All the Authors:Weihao Lu,Song Gao,Chao Liu

First Author:Chunwei Zhang

Indexed by:Journal paper

Correspondence Author:Yang Li

Translation or Not:no

Date of Publication:2024-04-01

Included Journals:SCI