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Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors

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Affiliation of Author(s):物理学院

Journal:Small

First Author:孙嘉敏

Document Code:650F95C0277B4208AB705D37C078516E

Volume:17

Issue:37

Number of Words:5

Translation or Not:no

Date of Publication:2021-09-01

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