Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication
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Institution:物理学院
Title of Paper:Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication
Journal:Advanced functional materials
Document Code:314C533916B0444396DED0A623634621
Issue:2304064
Number of Words:4
Translation or Not:No
Date of Publication:2023-05
Release Time:2024-01-16