location： Current position: Home >> Scientific Research >> Paper Publications

Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication

Hits:

Affiliation of Author(s):物理学院

Journal:Advanced functional materials

Document Code:314C533916B0444396DED0A623634621

Issue:2304064

Number of Words:4

Translation or Not:no

Date of Publication:2023-05-25

Pre One:Lattice-mismatch-free construction of III-V/ chalcogenide core-shell heterostructure nanowires

Next One:Room-temperature laser operation at 1.8 μm in Tm:GdVO4 waveguides

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep