A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24|Hits:

Affiliation of Author(s):微电子学院

Journal:Superlattices and Microstructures

All the Authors:linzhaojun,Cheng Aijie

First Author:付晨

Indexed by:综合研究

Document Code:886A7F23170748A3BB5EC63AEBE6B0D2

Volume:113

Page Number:160

Translation or Not:no

Date of Publication:2018-01-01