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A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    Superlattices and Microstructures
  • First Author:
    付晨
  • All the Authors:
    林兆军,程爱杰
  • Document Code:
    886A7F23170748A3BB5EC63AEBE6B0D2
  • Volume:
    113
  • Page Number:
    160
  • Translation or Not:
    No
  • Date of Publication:
    2018-01
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