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Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Release time:2019-10-24|Hits:

Affiliation of Author(s):微电子学院

Journal:scientific reports

All the Authors:linzhaojun,Cheng Aijie

First Author:cuipeng

Indexed by:综合研究

Document Code:6F146E0EDCBB4D39A65CB09F15ACC5F7

Volume:8

Translation or Not:no

Date of Publication:2018-01-01

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CONVERGENCE ANALYSIS OF MIXED VOLUME ELEMENT-CHARACTERISTIC MIXED VOLUME ELEMENT FOR THREE-DIMENSIONAL CHEMICAL OIL-RECOVERY SEEPAGE COUPLED PROBLEM
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A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

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