Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24|Hits:

Affiliation of Author(s):集成电路学院

Journal:?Superlattices and Microstructures

All the Authors:linzhaojun,Cheng Aijie

First Author:cuipeng

Indexed by:综合研究

Document Code:lw-183661

Volume:100

Page Number:358

Translation or Not:no

Date of Publication:2016-09-29