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Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    ？Superlattices and Microstructures
  • First Author:
    崔鹏
  • All the Authors:
    林兆军,程爱杰
  • Document Code:
    lw-183661
  • Volume:
    100
  • Page Number:
    358
  • Translation or Not:
    No
  • Date of Publication:
    2016-09
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