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Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

Release time:2019-10-24|Hits:

Affiliation of Author(s):数学学院

Journal:Superlattices and Microstructures

All the Authors:Cheng Aijie

First Author:刘欢

Indexed by:Unit Twenty Basic Research

Correspondence Author:linzhaojun

Document Code:F9BB185E29D949D494A8B8F21346A6EF

Volume:103

Page Number:113

Translation or Not:no

Date of Publication:2017-03-01

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Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
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Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

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