Paper Publications

Home >> Scientific Resear... >> Paper Publication...

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Release time:2019-10-24|Hits:

Affiliation of Author(s):微电子学院

Journal:IEEE Transactions on Electron Devices

All the Authors:Cheng Aijie

First Author:cuipeng

Indexed by:综合研究

Correspondence Author:linzhaojun

Document Code:E2988FC1A9E8447E954EB10F064D7460

Volume:64

Issue:3

Page Number:1038

Translation or Not:no

Date of Publication:2017-03-01

Pre One:
An hp-Galerkin method with fast solution for linear peridynamic models in one dimension
Next One:
Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

中文    |   MOBILE Version   |   Login SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --