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Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
Release Time:2019-10-24
  • Institution:
    微电子学院
  • Journal:
    IEEE Transactions on Electron Devices
  • First Author:
    崔鹏
  • Correspondence Author:
    林兆军
  • All the Authors:
    程爱杰
  • Document Code:
    E2988FC1A9E8447E954EB10F064D7460
  • Volume:
    64
  • Issue:
    3
  • Page Number:
    1038
  • Translation or Not:
    No
  • Date of Publication:
    2017-03
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