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Degree:Doctoral Degree in Science
Status:Employed
School/Department:海洋研究院

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陈镜

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Gender:Male

Education Level:With Certificate of Graduation for Doctorate Study

Alma Mater:复旦大学

Paper Publications

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Polarized Tunneling Transistor for Ultrafast Memory
Date of Publication:2023-06-20 Hits:

Affiliation of Author(s):海洋研究院
Journal:ACS nano
First Author:陈镜
Document Code:1678970431826767874
Volume:17
Issue:13
Page Number:12374-12382
Number of Words:5
Translation or Not:no
Date of Publication:2023-06-20
Date of Publication:2023-06-20

Pre One:PZT-Enabled MoS2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing

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