陈镜
Gender:Male
Education Level:With Certificate of Graduation for Doctorate Study
Alma Mater:复旦大学
Scientific Research
Working-Papers
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Paper Publications
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陈镜. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS, 16, 2024.
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陈镜. Polarized Tunneling Transistor for Ultralow-Energy-Consumption Artificial Synapse toward Neuromorphic Computing. ACS nano, 18, 581-591, 2024.
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陈镜. PZT-Enabled MoS2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing. Nano Letters, 23, 10196-10204, 2024.
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陈镜. Polarized Tunneling Transistor for Ultrafast Memory. ACS nano, 17, 12374-12382, 2023.
Patents
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Published Books
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Research Projects
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Research Team
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