Institution:集成电路学院
Title of Paper:Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation
Journal:APPLIED PHYSICS LETTERS
Document Code:DFDEF2DCDC314F80B05FDCDBD68F6AA1
Issue:25
Number of Words:3
Translation or Not:No
Date of Publication:2023-12
Release Time:2024-01-19
Research Associate
Gender : Female
Alma Mater : 澳门大学
Education Level : With Certificate of Graduation for Doctorate Study
Degree : Doctoral Degree in Philosophy
Status : Employed
School/Department : 集成电路学院
Date of Employment : 2023-08-31
Faculty/School : School of Integrated Circuits,Shandong University
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