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Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation
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Institution:集成电路学院

Title of Paper:Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation

Journal:APPLIED PHYSICS LETTERS

Document Code:DFDEF2DCDC314F80B05FDCDBD68F6AA1

Issue:25

Number of Words:3

Translation or Not:No

Date of Publication:2023-12

Release Time:2024-01-19

Personal information

Research Associate

Gender : Female

Alma Mater : 澳门大学

Education Level : With Certificate of Graduation for Doctorate Study

Degree : Doctoral Degree in Philosophy

Status : Employed

School/Department : 集成电路学院

Date of Employment : 2023-08-31

Faculty/School : School of Integrated Circuits,Shandong University

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