Highly efficient UV-Ozone treatment for IAZO active layer to facilitate the low temperature fabrication of high performance thin film transistors, Ceramics International 46, 2020, 通讯作者.
发布时间：2024-11-08
点击次数：
- 是否译文：
- 否
- 上一条：Room temperature fabricated high performance IAZO thin film transistors with dual-active-layer structure and sputtered Ta2O5 gate insulator, Journal of Alloys and Compounds 862, 2021, 通讯作者.
- 下一条：High performance thin film transistors with sputtered In-Al-Zn-O channel and different source/drain electrode, IEEE Electron Device Letters 40, 2019，通讯作者.