Room temperature fabricated high performance IAZO thin film transistors with dual-active-layer structure and sputtered Ta2O5 gate insulator, Journal of Alloys and Compounds 862, 2021, 通讯作者.
发布时间：2024-11-08
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- 上一条：Fabrication and characterization of high performance InAlZnO Schottky barrier diode and its application in ultraviolet photodetection, Applied Physics Letters 119, 2021, 通讯作者.
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