Preparation of high-performance IATO films and thin-film transistors with investigation on oxygen partial pressure effects and application of ALD Al2O3 gate insulator
发布时间：2025-12-02
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- 论文名称：
- Preparation of high-performance IATO films and thin-film transistors with investigation on oxygen partial pressure effects and application of ALD Al2O3 gate insulator
- 发表刊物：
- , ACS Applied Electronic Materials 7, 2025, 通讯作者.
- 是否译文：
- 否
- 发布时间：
- 2025-12-02
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