Tong Gao
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Paper Publications
Synthesis and Growth of 6H-SiC and 3C-SiC in an Al-Si-C System at 820 degrees C: Effect of the Reaction Path on the SiC Polytype
2020-02-01 Hits:
Affiliation of Author(s):材料科学与工程学院
Journal:CRYSTAL GROWTH & DESIGN
First Author:吴冲冲
Document Code:544669FD738E4E5A8417A37E1FA2F2BE
Volume:20
Issue:2
Page Number:1070
Number of Words:4
Translation or Not:no
Date of Publication:2020-02-01
Date of Publication:2020-02-01
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