Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Journal: : MATERIALS TODAY COMMUNICATIONS
First Author: : 胡秀飞
Document Code: : 8E5E1D1B1C7E4C2796CD135BF3F1E39B
Issue: : 31
Translation or Not: : no
Date of Publication: : 2022-04-15
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
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