Institution:新一代半导体材料研究院
Title of Paper:Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Journal:MATERIALS TODAY COMMUNICATIONS
First Author:胡秀飞
Document Code:8E5E1D1B1C7E4C2796CD135BF3F1E39B
Issue:31
Translation or Not:No
Date of Publication:2022-04
Release Time:2022-10-29
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
