Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Journal: : MATERIALS TODAY COMMUNICATIONS
First Author: : 王希玮
Document Code: : 32143576C2254570B520E462205E4DBE
Issue: : 31
Number of Words: : 6
Translation or Not: : no
Date of Publication: : 2022-04-15
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
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