Institution:新一代半导体材料研究院
Title of Paper:Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Journal:MATERIALS TODAY COMMUNICATIONS
First Author:王希玮
Document Code:32143576C2254570B520E462205E4DBE
Issue:31
Number of Words:6
Translation or Not:No
Date of Publication:2022-04
Release Time:2022-11-02
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
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