韩吉胜
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Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
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Affiliation of Author(s): : 新一代半导体材料研究院

Title of Paper: : Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Journal: : MATERIALS TODAY COMMUNICATIONS

First Author: : 王希玮

Document Code: : 32143576C2254570B520E462205E4DBE

Issue: : 31

Number of Words: : 6

Translation or Not: : no

Date of Publication: : 2022-04-15

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Gender : Male

School/Department : 新一代半导体材料研究院

Date of Employment : 2020-11-15

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