Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test
First Author: : 曾繁朋
Document Code: : 269EBC8BD4C5473D8AA0C7CCC9FFB067
Number of Words: : 5000
Translation or Not: : no
Date of Publication: : 2024-11-18
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
