Institution:新一代半导体材料研究院
Title of Paper:Failure Phenomenon of 4H-SiC Schottky Barrier Diode Under Thermal Shock Reliability Test
Journal:2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
First Author:曾繁朋
Document Code:269EBC8BD4C5473D8AA0C7CCC9FFB067
Number of Words:5000
Translation or Not:No
Date of Publication:2024-11
Release Time:2025-03-04
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
