Institution:新一代半导体材料研究院
Title of Paper:Impacts of silicon carbide defects on electrical characteristics of SiC devices
Journal:JOURNAL OF APPLIED PHYSICS
First Author:来玲玲
Document Code:D5742555117F4661AA6914F43C395CBC
Issue:060701
Page Number:1
Number of Words:5000
Translation or Not:No
Date of Publication:2025-02
Release Time:2025-02-25
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
Faculty/School : Integrated Technical Breakthrough Platform for New-generation Semiconductive Materials
The Last Update Time : ..
