Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Impacts of silicon carbide defects on electrical characteristics of SiC devices
Journal: : JOURNAL OF APPLIED PHYSICS
First Author: : 来玲玲
Document Code: : D5742555117F4661AA6914F43C395CBC
Issue: : 060701
Number of Words: : 5000
Translation or Not: : no
Date of Publication: : 2025-02-10
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
