Affiliation of Author(s): : 新一代半导体材料研究院
Title of Paper: : Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode
First Author: : 王新宇
Document Code: : 99EBB9F885AB4FE0A19772F7E975E724
Translation or Not: : no
Date of Publication: : 2024-11-18
Gender : Male
School/Department : 新一代半导体材料研究院
Date of Employment : 2020-11-15
The Last Update Time : ..
